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| Formosa MS GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. CMT2N7002 SMALL SIGNAL MOSFET FEATURES High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION SOT-23 SYMBOL D Top View 3 DRAIN SOURCE G GATE 1 2 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002 CMT2N7002G* *Note: G : Suffix for Pb Free Product Package SOT-23 SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0M) Drain to Current Continuous Pulsed Continue Total Power Dissipation Derate above 25J Single Pulse Drain-to-Source Avalanche Energy Operating and Storage Temperature Range Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TJ = 25J EAS TJ, TSTG JA TL (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25) -55 to 150 417 300 J J /W J Non-repetitive Symbol VDSS VDGR ID IDM VGS VGSM PD Value 60 60 115 800 20 40 225 1.8 9.6 V V mW mW/J mJ Unit V V mA Gate-to-Source Voltage Formosa MS ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25J . Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 g A) Drain-Source Leakage Current (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125J ) Gate-Source Leakage Current-Forward Gate-Source Leakage Current-Reverse Gate Threshold Voltage * (VDS = VGS, ID = 250 g A) On-State Drain Current (VDS U (VGS = 10 V, ID = 0.5A) (VGS = 10 V, ID = 0.5A, TC = 125J ) (VGS = 5.0 V, ID = 50mA) (VGS = 5.0 V, ID = 50mA, TC = 125J ) Drain-Source On-Voltage * (VGS = 10 V, ID = 0.5A) (VGS = 5.0 V, ID = 50mA) Forward Transconductance (VDS U Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Source Current Continuous (Body Diode) Source Current Pulsed * Pulse Test: Pulse Width O 300s, Duty Cycle O 2% 2.0 VDS(on), ID = 200mA) * (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 25 V, ID = 500 mA, Vgen = 10 V, RG = 25, RL = 50) * gFS Ciss Coss Crss td(on) td(off) VSD IS ISM VDS(on) 2.0 VDS(on), VGS = 10V) Id(on) RDS(on) (Vgsf = 20 V) (Vgsf = -20 V) IGSSF IGSSF VGS(th) IDSS Symbol V(BR)DSS CMT2N7002 SMALL SIGNAL MOSFET CMT2N7002 Min 60 Typ Max Units V 1.0 0.5 100 -100 1.0 500 7.5 13.5 7.5 13.5 2.5 g A mA nA nA V mA Static Drain-Source On-Resistance * V 3.75 0.375 80 50 25 5.0 20 40 -1.5 -115 -800 mmhos pF pF pF ns ns V mA mA Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) Formosa MS TYPICAL ELECTRICAL CHARACTERISTICS CMT2N7002 SMALL SIGNAL MOSFET Figure 5. Capacitance Formosa MS PACKAGE DIMENSION SOT-23 D 3 CMT2N7002 SMALL SIGNAL MOSFET b1 c1 c With Plating A A1 A2 b b1 c c1 D E E E1 Base Metal b Section B-B 1 e e1 2 E1 b L L1 e e1 1 A2 A 1 2 2 A1 See Section B-B L L1 |
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